Impedance analysis of a radio-frequency single-electron transistor

Applied Physics Letters

Volumn 81, Issue 17, 2002, Pages 3257-3259

  Cheong, H D ^a   Fujisawa, T ^a   Hayashi, T ^a   Hirayama, Y ^a   Jeong, Y H ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAAS/GAAS; CHARGE DETECTION; HIGH FREQUENCY; HIGH-SENSITIVITY; IMPEDANCE ANALYSIS; RADIO FREQUENCIES; SINGLE ELECTRON; SINGLE-ELECTRON TUNNELING BEHAVIOR; TRANSMISSION COEFFICIENTS;

CAPACITANCE MEASUREMENT; ELECTRIC IMPEDANCE; ELECTRON TUNNELING; TRANSIENTS;

SINGLE ELECTRON TRANSISTORS;

EID: 79956059828     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1515883     Document Type: Article

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