메뉴 건너뛰기




Volumn 77, Issue 4, 2000, Pages 543-545

Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001670035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.127038     Document Type: Article
Times cited : (85)

References (20)
  • 10
    • 0001554143 scopus 로고    scopus 로고
    • T. Fujisawa and S. Tarucha, Appl. Phys. Lett. 68, 526 (1996); Superlattices Microstruct. 21, 247 (1997); Jpn. J. Appl. Phys., Part 1 36, 4000 (1997).
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 526
    • Fujisawa, T.1    Tarucha, S.2
  • 11
    • 0030649757 scopus 로고    scopus 로고
    • T. Fujisawa and S. Tarucha, Appl. Phys. Lett. 68, 526 (1996); Superlattices Microstruct. 21, 247 (1997); Jpn. J. Appl. Phys., Part 1 36, 4000 (1997).
    • (1997) Superlattices Microstruct. , vol.21 , pp. 247
  • 12
    • 0037899978 scopus 로고    scopus 로고
    • T. Fujisawa and S. Tarucha, Appl. Phys. Lett. 68, 526 (1996); Superlattices Microstruct. 21, 247 (1997); Jpn. J. Appl. Phys., Part 1 36, 4000 (1997).
    • (1997) Jpn. J. Appl. Phys. , vol.36 , Issue.1 PART , pp. 4000
  • 13
    • 85037503963 scopus 로고    scopus 로고
    • note
    • The SET consists of tunneling resistance and capacitance, whose values can he deduced from the phase analysis of the transmitted signal. We focus here on the region where the resistance change of the SET is dominant.
  • 16
    • 85037505615 scopus 로고    scopus 로고
    • note
    • L < - 710 mV. The trapping of an electron lifts the potential of the dot by 0.3 meV, or induces an equivalent charge of 0.1 e on the dot, and changes (about 20%) the resistance of the tunneling barriers.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.