Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique

Applied Physics Letters

Volumn 77, Issue 4, 2000, Pages 543-545

  Fujisawa, Toshimasa ^a   Hirayama, Yoshiro ^a,b  

^a NTT Basic Research Laboratories   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001670035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.127038     Document Type: Article

References (20)

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