Frequency dependence of the dielectric properties of La-doped Pb(Zr 0.35Ti0.65)O3 thin films

Applied Physics Letters

Volumn 83, Issue 14, 2003, Pages 2892-2894

  Zhang, Z G ^a   Chu, D P ^a,b   McGregor, B M ^a,b   Migliorato, P ^a   Ohashi, K ^c   Hasegawa, K ^c   Shimoda, T ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Cambridge Research Laboratory of Epson   (United Kingdom)

^c SEIKO EPSON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LANTHANUM; LEAD COMPOUNDS; PERMITTIVITY; SEMICONDUCTOR DOPING;

DOMAIN WALLS;

THIN FILMS;

EID: 0142167502     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1613039     Document Type: Article

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