Separation of near interface regions from central bulk in a ferroelectric thin film

Integrated Ferroelectrics

Volumn 50, Issue , 2002, Pages 171-180

  Chu, D P ^a,b   Zhang, Z G ^b   Migliorato, P ^a,b   McGregor, B M ^a,b   Ohashi, K ^c   Hasegawa, K ^c   Shimoda, T ^c  

^a Cambridge Research Laboratory of Epson   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c SEIKO EPSON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC CONDUCTIVITY; INTERFACES (MATERIALS); SOL-GELS; STOICHIOMETRY; THICKNESS CONTROL;

BAND BENDING; BOTTOM ELECTRODES; CENTRAL BULK REGION (CBR);

FERROELECTRIC THIN FILMS;

EID: 0142163623     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/743817708     Document Type: Article

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