Design parameters for lateral carrier confinement in quantum-dot lasers

Applied Physics Letters

Volumn 74, Issue 19, 1999, Pages 2752-2754

  Kim, J K ^a   Strand, T A ^a   Naone, R L ^a   Coldren, L A ^a  

^a University of California at Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CATHODOLUMINESCENCE; DIFFUSION IN GASES; LEAKAGE CURRENTS; SEMICONDUCTOR QUANTUM DOTS;

LATERAL CARRIER CONFINEMENT; QUANTUM DOT LASERS; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032620877     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124003     Document Type: Article

References (5)

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