Analysis of small-signal response of the SiO2-(n) GaAs interface based on a surface disorder model

Vacuum

Volumn 54, Issue 1-4, 1999, Pages 183-188

  Kochowski, S ^a   Nowak, M ^a  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC DENSITY OF STATES; LEAST SQUARES APPROXIMATIONS; MATHEMATICAL MODELS; METAL INSULATOR BOUNDARIES; NUMERICAL ANALYSIS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SILICA; SPURIOUS SIGNAL NOISE;

CAPACITANCE VOLTAGE CHARACTERISTICS; LEAST SQUARES FITTING; LOCALIZED ELECTRON STATES; SURFACE DISORDER MODEL;

INTERFACES (MATERIALS);

EID: 0033154338     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(98)00457-6     Document Type: Article

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