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Volumn 57, Issue 8, 1998, Pages 4849-4856

Structural and electronic properties of ideal nitride/Al interfaces

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EID: 0142022340     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.4849     Document Type: Article
Times cited : (20)

References (63)
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    • 3442882603 scopus 로고    scopus 로고
    • Zhifang Fan et. al Appl. Phys. Lett. 68, 1672 (1996).
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 1672
  • 27
  • 35
    • 0000400597 scopus 로고    scopus 로고
    • Note that, in order to predict the deformation of AlN on GaN according to MTE, we used the theoretical AlN elastic constants as given in K. Kim, W. R. Lambrecht, and B. Segall, Phys. Rev. B 53, 16310 (1996).
    • (1996) Phys. Rev. B , vol.53 , pp. 16310
    • Kim, K.1    Lambrecht, W.2    Segall, B.3
  • 41
  • 57
    • 0001074048 scopus 로고    scopus 로고
    • Su-Huai Wei and Alex Zunger, Appl. Phys. Lett. 69, 2719 (1996).
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 2719


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.