Influence of growth direction and strain conditions on the band lineup at GaSb/InSb and InAs/InSb interfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 53, Issue 16, 1996, Pages 10852-10857

  Picozzi, S ^a   Continenza, A ^a   Freeman, A ^b  

^a UNIVERSITY OF L'AQUILA   (Italy)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039961221     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.10852     Document Type: Article

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