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Diamond and Related Materials

Volumn 9, Issue 3, 2000, Pages 295-299

Characteristics of homoepitaxial heavily boron-doped diamond films from their Raman spectra

(3) Pruvost, F a Bustarret, E a Deneuville, A a

a LABORATOIRE DE CRISTALLOGRAPHIE (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BORON; COMPOSITION EFFECTS; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; DOPING (ADDITIVES); EPITAXIAL GROWTH; LASER BEAM EFFECTS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SURFACE TREATMENT;

HOMOEPITAXIAL GROWTH; WAVE NUMBERS;

DIAMOND FILMS;

EID: 0033729560 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-9635(99)00241-1 Document Type: Article

Times cited : (116)

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