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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 5 A, 2000, Pages 2795-2796

Growth sector dependence of low frequency raman peaks observed in boron-doped homoepitaxial diamond particles

(4) Wang, Yuguang a Li, Hongdong a Lin, Zhangda a Feng, Kean a

a INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

Author keywords

Boron doping; Homoepitaxial diamond particle; Low frequency raman peak

Indexed keywords

BAND STRUCTURE; BORON; CRYSTAL ORIENTATION; DOPING (ADDITIVES); ELECTRON SCATTERING; EPITAXIAL GROWTH; PARTICLES (PARTICULATE MATTER); RAMAN SCATTERING; RAMAN SPECTROSCOPY;

HOMOEPITAXIAL GROWTH;

DIAMONDS;

EID: 0033714601 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.2795 Document Type: Article

Times cited : (12)

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