Shallow junction formation in Si-devices: Damage accumulation and the role of photo-acoustic probes and multi-species implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 121, Issue 1-4, 1997, Pages 262-266

  Current, Michael I ^a   Ohno, N ^b   Hara, T ^c  

^a APPLIED MATERIALS INC   (United States)

^b INTEL CORPORATION   (United States)

^c HOSEI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BORON; DIFFUSION IN SOLIDS; ION IMPLANTATION; RADIATION DAMAGE; SEMICONDUCTING SILICON; THERMAL EFFECTS;

DAMAGE ACCUMULATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0031546213     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00537-X     Document Type: Article

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