Implantation damage and transient enhanced diffusion modeling

Solid State Technology

Volumn 41, Issue 2, 1998, Pages 97-104

  Giles, Martin D ^a   Yu, Shaofeng ^a   Kennel, Harold W ^a   Packan, Paul A ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; ION IMPLANTATION; SEMICONDUCTOR DEVICE MODELS;

TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0141752702     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (15)

1. C.S. Rafferty, et al., "Explanation of the reverse short channel effect by defect gradient," IEDM Technical Digest, p, 311, 1993.
2. D.J. Eaglesham, et al., "Implantation and transient B diffusion in Si: The source of the interstitials," Appl. Phys. Lett. 65, 2305, 1994.
3. M.D. Giles, "Transient phosphorous diffusion below the amorphization threshold," J. Electrochem. Soc. 138, 1160, 1991.
4. J.M. Poate, et al., "Ion implantation and transient enhanced diffusion," IEDM Technical Digest, p. 77, 1995.
5. D.R. Lim, C.S. Rafferty, F.P. Klemens, "The role of the surface in transient enhanced diffusion," Appl. Phys. Lett. 67, 2302, 1995.
6. P. Packan, et al., "Understanding implant damage by implant channeling profile measurement," Ion Implantation Tech. Conf. Proc., June 1996.
7. P.M. Fahey, P.B. Griffin, J.D. Plummer, "Point defects and dopant diffusion in silicon," Rev. Mod. Phys. 61, 289, 1989.
8. C.S. Rafferty, "Progress in predicting transient diffusion," SISPAD '97 Technical Digest, p. 1, 1997.
9. P.M. Rousseau, P.B. Griffin, J.D. Plummer, "Electrical deactivation of arsenic as a source of point defects," Appl. Phys. Lett. 65, 578, 1994.
10. 2 interfaces," IEEE Elec. Dev. Lett. 6, 285, 1985.
11. A. E. Michel, et al., "Rapid annealing and the anomalous diffusion of ion implanted boron in silicon, "Appl. Phys. Lett. 50, 416, 1987.
12. A.D. Lilak, et al., "A physics-based modeling approach for the simulation of anomalous boron diffusion and clustering behaviors," IEDM 1997 Tech. Dig.
13. R.B. Fair, "Point defect charge state effects on transient diffusion of dopant in Si," J. Electrochem. Soc. 137, 667, 1990.
14. R.B. Fair, "Concentration profiles of diffused dopants in silicon," Impurity Doping Processes in Silicon, F.F.Y. Tang, ed., North-Holland, New York, 1981.
15. F. Lau, et al., "A model for phosphorous segregation at the silicon-silicon dioxide interface." Appl. Phys. A 49, 671, 1989.