Resist reflow for 193nm low K1 lithography contacts

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 II, Issue , 2003, Pages 807-816

  Montgomery, Patrick ^a   Lucas, Kevin ^b   Strozewski, Kirk ^b   Zavyalova, Lena ^b   Grozev, Grozdan ^c   Reybrouck, Mario ^c   Tzviatkov, Plamen ^d   Maenhoudt, Mireille ^c  

^a MOTOROLA INC   (United States)

^b MOTOROLA INC   (United States)

^c IMEC   (Belgium)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; ERRORS; MASKS; OPTIMIZATION; PHOTOLITHOGRAPHY; THICKNESS CONTROL;

HIGH DENSE CONTACT MASK ERROR; LITHOGRAPHY CONTACTS; MOORES LAW; RESIST REFLOW; RETICLE;

PHOTORESISTS;

EID: 0141722784     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485186     Document Type: Conference Paper

References (9)

1. V. Van Driessche, et. al. 100nm generation contact patterning by low temperature 193 nm resist reflow process. Proc. of SPIE Vol. 4690, 2002.
2. 2001 ITRS ASIC Lithography Roadmap.
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6. J. Kim, J. Jung, C. Koh, K, Baik, K. Shin, 'Novel Routes towards Sub-70 nm Contact Windows by using new KrF photoresist', Proc. Of SPIE, Vol. 4345 (2001).
7. M. Neisser, J. Biafore, P. Foster, G. Spaziano, T. Sarubbi, V. Van Driessche, G. Grozev and P. Tzviatkov, 'Adjustment of Bilayer Optical Properties and the Effect on Imaging and Etching Performance', Proc. of SPIE, Vol. 4000, p. 942 (2000).
8. I. Pollentier, M. Maenhoudt, V. Wiaux, D. Vangoidsenhoven and K. Ronse, 'Dual Damascene Back-End Patterning Using 248 and 193 nm Lithography.', Proc. of ARCH Interface, p. 265 (2000).
9. M. Maenhoudt, V. Wiaux, I. Pollentier, D. Vangoidsenhoven, K. Ronse, M. Vanhove, 'Lithography aspects of dual damascene interconnect technology', Proc. of SPIE, Vol. 4404 (2001).