The control of resist flow process for sub-0.15 μm small contact hole by latent image

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4344, Issue , 2001, Pages 297-304

  Kim, B K ^a   Lee, S J ^a   Lee, D Y ^a   Lee, J W ^a   Nam, J L ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Acetal type PR; Aerial image intensity; Amount of PR flow; Attenuated phase shift mask; Bake process; Bulk region; Glass transition temperature; Pattern density; Resist flow sensitivity

Indexed keywords

CHEMICAL BONDS; GLASS TRANSITION; IMAGE ANALYSIS; MASKS; PHASE SHIFT; SEMICONDUCTOR DEVICE MANUFACTURE;

PHASE SHIFT MASKS (PSM);

PHOTORESISTS;

EID: 0034777958     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436755     Document Type: Conference Paper

References (2)