193nm contact photoresist reflow feasibility study

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue 1, 2001, Pages 725-736

  Lucas, Kevin ^a   Slezak, Mark ^b   Ercken, Monique ^c   Van Roey, Frieda ^c  

^a MOTOROLA INC   (United States)

^b JSR Microelectronics   (United States)

^c IMEC   (Belgium)

Author keywords

193nm photoresists; Contact patterning for the 100nm and 130nm generations; Photoresist reflow

Indexed keywords

ADDITIVES; ETCHING; HIGH TEMPERATURE EFFECTS; MOLECULAR WEIGHT; PHOTORESISTS; SHRINKAGE;

CONTACT PATTERNING; CONTACT REFLOW;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0034757329     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436850     Document Type: Article

References (4)

1. International technology roadmap for semiconductors
2. A novel resist material for sub-100nm contact hole pattern
3. Techniques to print sub-0.2μm contact holes