100 nm generation contact patterning by low temperature 193 nm resist reflow process

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4690 II, Issue , 2002, Pages 631-642

  Van Driessche, Veerle ^a   Lucas, Kevin ^b   Van Roey, Frieda ^c   Grozev, Grozdan ^a   Tzviatkov, Plamen ^a  

^a Arch Chemicals NV   (Belgium)

^b MOTOROLA INC   (United States)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; IMAGING SYSTEMS; MASKS; PHASE SHIFT; SILICON WAFERS;

CONTACT HOLE PATTERNING;

PHOTORESISTS;

EID: 0036031290     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474204     Document Type: Article

References (9)

1. 2000 SIA ASIC Lithography Roadmap.
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3. B. Kim, et. al., 'The control of resist flow process for 120 nm small contact hole by latent image', Proc. Of SPIE, Vol. 4344 (2001).
4. Y. Kang, et. al., 'Development of resists for thermal flow applicable to mass production', Proc. Of SPIE, Vol. 4345 (2001).
5. J. Kim, et. al., 'Novel Routes towards Sub-70 nm Contact Windows by using new KrF photoresist', Proc. SPIE, Vol. 4345 (2001).
6. M. Neisser, J. Biafore, P. Foster, G. Spaziano, T. Sarubbi, V. Van Driessche, G. Grozev and P. Tzviatkov, 'Adjustment of Bilayer Optical Properties and the Effect on Imaging and Etching Performance', Proc. Of SPIE, Vol. 4000, p. 942 (2000).
7. I. Pollentier, et. al., 'Dual Damascene Back-End Patterning Using 248 & 193nm Lithography', Proc. ARCH Interface, p.265 (2000).
8. M. Maenhoudt, V. Wiaux, I. Pollentier, D. Vangoidsenhoven, K. Ronse, M. Vanhove, 'Lithography aspects of dual damascene interconnect technology', Proc. Of SPIE, Vol. 4404 (2001).
9. V. Van Driessche, K. Lucas, F. Van Roey, G. Grozev, P. Tzviatkov, 'Low temperature 193 nm resist reflow process for 100 nm generation contact patterning', Proc. Of SPIE, Vol. 4404 (2001).