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Volumn 9, Issue 3, 2000, Pages 781-785

Characterization of defects in thin films of hydrogenated amorphous carbon

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DEFECTS; ELECTRODES; ELECTRON SPIN RESONANCE SPECTROSCOPY; FILM GROWTH; HYDROGENATION; INTERFACES (MATERIALS); NITROGEN; SILICON; SUBSTRATES; THIN FILMS;

EID: 0033739007     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(99)00325-8     Document Type: Article
Times cited : (33)

References (17)
  • 14
    • 0004246662 scopus 로고
    • EMIS Data Review Series No. 4, The Institute of Electrical Engineers (INSPEC), London/ New York
    • C.T. Sah, in: Properties of Silicon, EMIS Data Review Series No. 4, The Institute of Electrical Engineers (INSPEC), London/ New York, 1988, p. 505.
    • (1988) Properties of Silicon , pp. 505
    • Sah, C.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.