Effect of Al, Ta, and O precursors on growth and properties of Al2O3 and Ta2O5 thin films deposited by triode PECVD

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 445-450

  Klein, Tonya ^a   Niu, Dong ^a   Parsons, Gregory ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; FILM GROWTH; LEAKAGE CURRENTS; OXYGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; TANTALUM COMPOUNDS; TEMPERATURE; TRIODES;

GATE DIELECTRIC; OXYGEN PRECURSORS; TRIODE PLASMA REACTOR;

THIN FILMS;

EID: 0033340293     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-445     Document Type: Conference Paper

References (7)

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