Preparation of low-threshold and high current rectifying heterojunction using B-doped diamond grown on Si-treated c-BN crystals

Diamond and Related Materials

Volumn 12, Issue 8, 2003, Pages 1422-1425

  Wang, C X ^a,b   Yang, G W ^a   Zhang, T C ^b   Liu, H W ^b   Han, Y H ^b   Luo, J F ^b   Gao, C X ^b   Zou, G T ^b  

^a SUN YAT SEN UNIVERSITY   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

C BN; Diamond film; Diode; Raman spectroscopy

Indexed keywords

BORON; CRYSTALLINE MATERIALS; CUBIC BORON NITRIDE; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; FILM GROWTH; HETEROJUNCTIONS; SILICON;

LOW-THRESHOLD HETEROJUNCTIONS;

DIAMOND FILMS;

DIAMOND;

EID: 0043270295     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(03)00172-9     Document Type: Article

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