Interference ferromagnet/semiconductor/ferromagnet spin field-effect transistor

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 12, 2001, Pages

  Schapers T ^a   Nitta, J ^a   Heersche, H B ^a   Takayanagi, H ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIAL;

ARTICLE; CALCULATION; CONDUCTANCE; ELECTRODE; INTERFEROMETER; MAGNETISM; MATHEMATICAL ANALYSIS; SEMICONDUCTOR; SIGNAL PROCESSING; STRUCTURE ANALYSIS;

EID: 0035883570     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.125314     Document Type: Article

References (34)

1. J. de Boeck, Science357, 357 (1998).
2. P. Ball, Nature (London)404, 918 (2000).
3. E I. Rashba, Sov. Phys. Solid State2, 1190 (1960).
4. Y A. Bychkov and E J. Rashba, J. Phys. C17, 6039 (1984).
5. S. Datta and B. Das, Appl. Phys. Lett.56, 665 (1990).
6. H X. Tang, F G. Monzon, R. Lifshitz, M C. Cross, and M L. Roukes, Phys. Rev. B61, 4437 (2000).
7. D. Grundler, Phys. Rev. Lett.86, 1058 (2001).
8. R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L W. Molenkamp, Nature (London)402, 787 (1999).
9. Y. Ohno, D K. Young, B. Beschoten, F. Matsukara, H. Ohno, and D D. Awschalom, Nature (London)402, 790 (1999).
10. P R. Hammar, B R. Bennett, M J. Yang, and M. Johnson, Phys. Rev. Lett.83, 203 (1999).
11. S. Gardelis, C G. Smith, C H W. Barnes, E H. Linfield, and D A. Ritchie, Phys. Rev. B60, 7764 (1999).
12. F G. Monzon, H X. Tang, and M L. Roukes, Phys. Rev. Lett.84, 5022 (2000).
13. B J. van Wees, Phys. Rev. Lett.84, 5023 (2000).
14. P R. Hammar, M J. Yang, and M. Johnson, Phys. Rev. Lett.84, 5024 (2000).
15. A T. Filip, B H. Hoving, F J. Jedema, B J. van Wees, B. Dutta, and S. Borghs, Phys. Rev. B62, 9996 (2000).
16. C.-M. Hu, J. Nitta, A. Jensen, J B. Hansen, and H. Takayanagi, Phys. Rev. B63, 125333 (2001).
17. G. Schmidt, D. Ferrand, L W. Molenkamp, A T. Filip, and B J. van Wees, Phys. Rev. B62, R4790 (2000).
18. E I. Rashba, Phys. Rev. B62, 16267 (2000).
19. H B. Heersche, J. Nitta, and H. Takayanagi, Th. Schäpers, Phys. Rev. B (to be published).
20. C W J. Beenakker and H. van Houten, in Solid State Physics, edited by H. Ehrenreich and D. Turnbull (Academic, New York, 1991), Vol. 44, p. 1.
21. Interferences in metal/semiconductor/metal structures have been demonstrated before by using a superconductor as a metal;
22. see, e.g., H. Takayanagi, T. Akazaki, and J. Nitta, Phys. Rev. B51, 1374 (1995).
23. J C. Slonczewski, Phys. Rev. B39, 6995 (1989).
24. G E W. Bauer, Phys. Rev. Lett.69, 1676 (1992).
25. M J M. de Jong and C W J. Beenakker, Phys. Rev. Lett.74, 1657 (1995).
26. X. Zhang, B.-Z. Li, G. Sun, and F.-C. Pu, Phys. Rev. B56, 5484 (1997).
27. Y. Qi, D Y. Xing, and J. Dong, Phys. Rev. B58, 2783 (1998).
28. Z. Zheng, Y. Qi, D Y. Xing, and J. Dong, Phys. Rev. B59, 14505 (1999).
29. Y. Ando and T. Itoh, J. Appl. Phys.61, 1487 (1987).
30. G E. Blonder, M. Tinkham, and T M. Klapwijk, Phys. Rev. B25, 4515 (1982).
31. J. Nitta, T. Akazaki, H. Takayanagi, and T. Enoki, Phys. Rev. Lett.78, 1335 (1997).
32. Th. Schäpers, G. Engels, J. Lange, Th. Klocke, M. Hollfelder, and H. Lüth, J. Appl. Phys.83, 4324 (1998).
33. A change of (formula presented) as a function of the normal metal layer thickness in a FM/insulator/normal-metal/FM structure was reported by J S. Moodera, Phys. Rev. Lett.83, 3029 (1999).
34. The parameter set used for the calculation shown in Fig. 22, (formula presented), does not comply with this condition.