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EPJ Applied Physics

Volumn 4, Issue 1, 1998, Pages 1-4

Gate-induced spin precession in an In0.53Ga0.47As two dimensional electron gas

(4) Bournel, A a Dollfus, P a Bruno, P b Hesto, P a

a UNIVERSITÉ PARIS SACLAY (France)

b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTROMAGNETIC WAVE POLARIZATION; ELECTRON GAS; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; MOLECULAR ORIENTATION; MONTE CARLO METHODS;

CARRIER WAVE VECTOR; GATE INDUCED SPIN PRECESSION; INDIUM GALLIUM ARSENIDE; RASHBA INTERACTION; SPIN COHERENCE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032318577 PISSN: 12860042 EISSN: None Source Type: Journal
DOI: 10.1051/epjap:1998238 Document Type: Article

Times cited : (69)

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