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Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 251, Issue 5, 1999, Pages 336-339

The structural and electric behavior of SrBi2Ta2O9 ferroelectric thin films with H+ implantation

(6) Zeng, Jianming a Zheng, Lirong a Lin, Chenglu a Alexe, M b Pignolet, A b Hesse, D b

a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

Ferroelectric thin films; H+ implantation; SrBi2Ta2O9 (SBT)

Indexed keywords

BISMUTH COMPOUNDS; CAPACITANCE; ELECTRIC FIELDS; FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; SOL-GELS; STRONTIUM COMPOUNDS; TANTALUM COMPOUNDS; X RAY POWDER DIFFRACTION;

CAPACITANCE-VOLTAGE CHARACTERISTICS; COERCIVE ELECTRIC FIELD; CRYSTALLINE STRUCTURE; ELECTRICAL CHARACTERISTIC; ELECTRICAL MEASUREMENT; FERROELECTRIC PROPERTY; REMNANT POLARIZATIONS; SRBI2TA2O9;

THIN FILMS;

EID: 0042782225 PISSN: 03759601 EISSN: None Source Type: Journal
DOI: 10.1016/S0375-9601(98)00909-8 Document Type: Article

Times cited : (4)

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