Alloy states in dilute GaAs1-xNx alloys (x<1%)

Applied Physics Letters

Volumn 82, Issue 11, 2003, Pages 1697-1699

  Luo, X D ^a   Huang, J S ^a   Xu, Z Y ^a   Yang, C L ^b   Liu, J ^b   Ge, W K ^b   Zhang, Y ^c   Mascarenhas, A ^c   Xin, H P ^d   Tu, C W ^d  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

CONTINUOUS-WAVE PHOTOLUMINESCENCE; TIME-RESOLVED PHOTOLUMINESCENCE;

GALLIUM ALLOYS;

EID: 0037451390     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1560872     Document Type: Article

References (17)

1. M. Weyers, M. Sato, and H. Ando, Jpn. J. Appl. Phys., Part 1 31, L853 (1992).
2. S.-H. Wei and A. Zunger, Phys. Rev. Lett. 76, 664 (1996).
3. J. D. Perkins, A. Mascarenhas, Y. Zhang, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett. 82, 3312 (1999).
4. W. Shan, W. Walukiewicz, J. W. Ager, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett. 82, 1221 (1999).
5. E. D. Jones, N. A. Modine, A. A. Allerman, S. R. Kurtz, A. F. Wright, S. T. Torez, and X. Wei, Phys. Rev. B 60, 4430 (1999).
6. T. Makimoto, H. Saito, T. Nishida, and N. Kobayashi, Appl. Phys. Lett. 70, 2984 (1997).
7. H. Grüning, L. Chen, Th. Hartmann, P. J. Klar, W. Heimbrodt, F. Höhnsdorf, J. Koch, and W. Stolz, Phys. Status Solidi B 215, 39 (1999).
8. Y. Zhang, A. Mascarenhas, J. F. Geisz, H. P. Xin, and C. W. Tu, Phys. Rev. B 63, 085205 (2001).
9. Y. Zhang, B. Fluegel, M. Hanna, A. Duda, and A. Mascarenhas, Mater. Res. Soc. Symp. Proc. 692, H2.1.1 (2002).
10. Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu, Phys. Rev. B 63, 161303(R) (2001).
11. Y. J. Wang, X. Wei, Y. Zhang, A. Mascarenhas, H. P. Xin, Y. G. Hong, and C. W. Tu (unpublished).
12. P. R. C. Kent and A. Zunger, Phys. Rev. B 64, 115208 (2001).
13. S. Francoeur, S. A. Nikishin, C. Jin, Y. Qiu, and H. Temkin, Appl. Phys. Lett. 75, 1538 (1999).
14. X. D. Luo, Z. Y. Xu, B. Q. Sun, W. K. Ge, Z. Pan, L. H. Li, and Y. W. Lin, Appl. Phys. Lett. 79, 958 (2001).
15. I. A. Buyanova, W. M. Chen, and B. Monemar, MRS Internet J. Nitride Semicond. Res. 6, 2 (2001), and references herein.
16. U. Bockelmann, Phys. Rev. B 48, 17637 (1993).
17. D. S. Citrin, Phys. Rev. Lett. 69, 3393 (1992).