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Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 597-600

Characterization of SiC epitaxial wafers by photoluminescence under deep UV excitation

(3) Tajima, M a Tanaka, M a,b,c Hoshino, N a

a JAPAN AEROSPACE EXPLORATION AGENCY (Japan)

b TOKYO UNIVERSITY OF SCIENCE (Japan)

c YOKOGAWA ANALYTICAL SYSTEMS INC (Japan)

Author keywords

Deep level; Epitaxial layers; Mapping; Nonuniformity; Photoluminescence

Indexed keywords

EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SILICON CARBIDE; ULTRAVIOLET RADIATION; EPITAXIAL LAYERS; MAPPING; SILICON WAFERS; SUBSTRATES;

BAND EDGE EMISSION; EPITAXIAL WAFERS; NONUNIFORMITY; WAFER MAPPING; BAND-EDGE EMISSIONS; CRYSTALLINE QUALITY; DEEP LEVEL EMISSION; DEEP-LEVEL; GENERAL TRENDS; LIGHT EXCITATION;

EPITAXIAL LAYERS; EPITAXIAL GROWTH;

EID: 0042875232 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.597 Document Type: Article

Times cited : (12)

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