Mapping of vanadium-related luminescence on SiC wafer at room temperature

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 9 A/B, 1997, Pages

  Tajima, Michio ^a   Kumagaya, Yoshikazu ^b,d   Nakata, Toshitake ^c   Inoue, Morio ^c   Nakamura, Akira ^b  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c Ion Eng Res Institute Corporation   (Japan)

^d FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Denuded zone; Gettering; Mapping; Photoluminescence; PL; SiC; Vanadium

Indexed keywords

CHARGE CARRIERS; CRACKS; CRYSTAL DEFECTS; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; VANADIUM;

GETTERING EFFECTS; INTENSITY PROFILE MEASUREMENT; SILICON CARBIDE WAFERS;

SILICON CARBIDE;

EID: 0031220283     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1185     Document Type: Article

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