SCOPUS 정보 검색 플랫폼

Volumn 338, Issue , 2000, Pages

Radiation defects and doping of SiC with phosphorus by nuclear transmutation doping (NTD)

(4) Heissenstein, Hans a Sadowski, Horst a Peppermüller, Christian a Helbig, Reinhard a

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NEUTRON IRRADIATION; PHOSPHORUS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

FAST NEUTRONS; NUCLEAR TRANSMUTATION DOPING (NTD);

SILICON CARBIDE;

EID: 17544404222 PISSN: 02555476 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Article

Times cited : (6)

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