Characterization of nonuniformity of 6H-SiC wafers by photoluminescence mapping at room temperature

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 4 B, 1999, Pages

  Tajima, Michio ^a   Nakane, Taketomo ^a   Nakata, Toshitake ^a   Watanabe, Masanori ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; FLOW OF FLUIDS; HYDROGEN; PHOTOLUMINESCENCE; SILICON CARBIDE; THERMAL GRADIENTS;

SILICON CARBIDE WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032654786     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l414     Document Type: Article

References (10)