Sb diffusion in heavily doped Si substrates

Journal of the Electrochemical Society

Volumn 146, Issue 1, 1999, Pages 336-338

  Suzuki, Kunihiro ^a   Tashiro, Hiroko ^a   Aoyama, Takayuki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; POINT DEFECTS; SEMICONDUCTING ANTIMONY; SEMICONDUCTOR DOPING; SUBSTRATES;

NEUTRAL POINT DEFECTS;

SEMICONDUCTING SILICON;

EID: 0032737279     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391610     Document Type: Article

References (3)

1. K. Suzuki, A. Satoh, and T. Sugii, IEEE Trans. Electron Devices, ED-44, 448 (1997).
2. S. K. Ghandhi, VLSI Fabrication Principles, p. 132, John Wiley & Sons, Inc., New York (1982).
3. G. G. Shahidi, J. Warnock, A. Agnello, C. Blair, T. Bucelot, A. Burghartz, E. Crabbe, J. Cressler, P. Coane, J. Comfort, B. Davari, S. Fischer, E. Ganin, S.Gittleman, J. Keller, K. Jenkins, D. Klaus, K. Ketniak, T. Lii, P. A. McFarland, T. Ning, M. Polcari, S. Subbana, J. Y. Sun, D. Sunderland, A. C. Warren, and C. Wong, 1993 VLSI Technology Technical Digest, pp. 93-94 (1993).