Time evolution of boron-doped crystalline and polycrystalline silicon resistance

Journal of the Electrochemical Society

Volumn 147, Issue 8, 2000, Pages 3106-3108

  Suzuki, Kunihiro ^a   Tashiro, Hiroko ^a   Aoyama, Takayuki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS;

SEPARATION BY IMPLANTION OF OXYGEN (SIMOX);

SEMICONDUCTING FILMS;

EID: 0034246568     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393864     Document Type: Article

References (7)

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