Time evolution of the resistance of arsenic, phosphorous, and boron-doped crystalline silicon

Journal of the Electrochemical Society

Volumn 149, Issue 3, 2002, Pages

  Suzuki, Kunihiro ^a   Tashiro, Hiroko ^a   Aoyama, Takayuki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BORON; CHEMICAL RESISTANCE; CRYSTAL IMPURITIES; DOPING (ADDITIVES); PHOSPHORUS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; TEMPERATURE;

DOPING IMPURITY; SEPARATION BY IMPLANTATION OF OXYGEN;

SILICON;

EID: 0036503646     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1436086     Document Type: Article

References (5)