SCOPUS 정보 검색 플랫폼

Volumn 146, Issue 2, 1999, Pages 755-757

Time Evolution of Boron-Doped Polycrystalline Silicon Gate Resistance

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

SILICON GATE RESISTANCE;

SEMICONDUCTING SILICON;

EID: 0033075803 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1391676 Document Type: Article

Times cited : (4)

References (5)

1
- 0030080298
- K. Suzuki, A. Satoh, T. Aoyama, I. Namura, F. Inoue, Y. Kataoka, Y. Tada, and T. Sugii, Jpn. J. Appl. Phys., 35, 1496 (1996).
- (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 1496
- Suzuki, K.¹ Satoh, A.² Aoyama, T.³ Namura, I.⁴ Inoue, F.⁵ Kataoka, Y.⁶ Tada, Y.⁷ Sugii, T.⁸

2
- 0027680835
- K. Suzuki, Y. Yamashita, Y. Kataoka, K. Yamazaki, and K. Kawamura. J. Electrochem. Soc., 140, 2960 (1993).
- (1993) J. Electrochem. Soc. , vol.140 , pp. 2960
- Suzuki, K.¹ Yamashita, Y.² Kataoka, Y.³ Yamazaki, K.⁴ Kawamura, K.⁵

3
- 0029293798
- K. Suzuki, N. Miyata, and K. Kawamura. Jpn. J. Appl. Phys., 34, 1748 (1995).
- (1995) Jpn. J. Appl. Phys. , vol.34 , pp. 1748
- Suzuki, K.¹ Miyata, N.² Kawamura, K.³

4
- 0003679027
- McGraw-Hill, New York
- S. M. Sze, VLSI Technology, p. 287. McGraw-Hill, New York (1988).
- (1988) VLSI Technology , pp. 287
- Sze, S.M.¹

5
- 0026186066
- K. Suzuki, T. Fukano, and Y. Kataoka. J. Electrochem. Soc., 138, 2201 (1991).
- (1991) J. Electrochem. Soc. , vol.138 , pp. 2201
- Suzuki, K.¹ Fukano, T.² Kataoka, Y.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.