Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions

Journal of Applied Physics

Volumn 48, Issue 10, 1977, Pages 4234-4240

  Csepregi, L ^a   Kennedy, E F ^a   Gallagher, T J ^a   Mayer, J W ^a   Sigmon, T W ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING FILMS - IMPURITIES;

SEMICONDUCTING SILICON;

EID: 0017545298     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.323408     Document Type: Article

References (11)