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Volumn 179, Issue 3-4, 1997, Pages 585-591

Selective area vapor-phase epitaxy and structural properties of Hg1-xCdxTe on sapphire

(9) Sochinskii, N V a,f,g Munoz V a Bernardi, S b Espeso, J I c,h Alves, E d Da Silva, M F d Soares, J C d Marin C e Dieguez E e

a UNIVERSITY OF VALENCIA (Spain)

b CREO (Italy)

c EUROPEAN SYNCHROTRON RADIATION FACILITY (France)

d INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

e UNIVERSIDAD AUTÓNOMA DE MADRID (Spain)

f INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

g New Semiconductors (Ukraine)

h UNIVERSITY OF CANTABRIA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE EFFECTS; INTERDIFFUSION (SOLIDS); METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLITHOGRAPHY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING CADMIUM COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES;

DIISOPROPYLTELLURIUM; DIMETHYLCADMIUM; MERCURY CADMIUM TELLURIDE; SYNCHROTRON X RAY TOPOGRAPHY;

MERCURY COMPOUNDS;

EID: 0031209041 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00153-X Document Type: Article

Times cited : (9)

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