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Journal of Crystal Growth

Volumn 192, Issue 1-2, 1998, Pages 109-116

An electron microscopy study on the formation mechanism of hillocks on the (1 0 0)CdTe/GaAs

(5) Kim, Y K a Lee, J Y a Kim, H S a Song, Jong Hyeong b Suh, Sang Hee b

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Korea Institute of Science and Technology (South Korea)

Author keywords

CdTe GaAs; Hillock formation; Planar defect; Pyramidal hillock

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

EPITAXIAL LAYER; HILLOCK FORMATION; SURFACE DENSITY;

CRYSTAL DEFECTS;

EID: 0032475015 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00432-1 Document Type: Article

Times cited : (11)

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