Effects of various passivation dielectrics and via reservoir lengths on stress and electromigration reliability of metal interconnects

Materials Research Society Symposium - Proceedings

Volumn 695, Issue , 2002, Pages 303-308

  Park, Young Bae ^a   Cho, Young Ah ^a   Lee, Won Gyu ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; DIELECTRIC MATERIALS; ELECTROMIGRATION; FUSED SILICA; MAGNETRON SPUTTERING; METALLIZING; PASSIVATION; PHOTOLITHOGRAPHY; PLASMA DENSITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; STRESSES;

FLOWABLE OXIDE; HIGH DENSITY PLASMA FLUORINATED SILICA GLASS; METAL INTERCONNECTS; PASSIVATION DIELECTRICS;

METALS;

EID: 0036352106     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)