The effect of residual tensile stress on electromigration lifetime of metal lines passivated by various oxides

Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Volumn , Issue , 2000, Pages 205-207

  Kim, Young Pil ^a   Kwon, Dong Chul ^a   Choi, Han Mei ^a   Park, Young Wook ^a   Lee, Sang In ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMIGRATION; PASSIVATION; RESIDUAL STRESSES; X RAY DIFFRACTION;

LOW STRESS REGION; METAL INTERCONNECTS; MONOTONOUS FUNCTIONS; RESIDUAL TENSILE STRESS; STRESS EVOLUTION; TENSILE YIELD STRENGTH; THEORETICAL CALCULATIONS; X-RAY DIFFRACTION METHOD;

ALUMINUM;

EID: 84962878037     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2000.854326     Document Type: Conference Paper

References (6)

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6. P. A. Flinn et al., IEEE Trans. Electr. Dev. 34 (3), 689 (1987)