High-reliability tungsten-stacked via process with fully converted TiAl3 formation annealing

IEEE Transactions on Semiconductor Manufacturing

Volumn 12, Issue 3, 1999, Pages 302-312

  Shohji, Raijiroh ^a   Uda, Mitsuru ^a   Nakamura, Takashi ^a   Yoda, Tetsuya ^a   Itoh, Yoshitake ^a  

^a IBM JAPAN LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANTIREFLECTION COATINGS; DISCOLORATION; INTERFACES (MATERIALS); RELIABILITY; SHRINKAGE; STRESSES; TITANIUM ALLOYS; TUNGSTEN;

FILM SEPARATION; MAXIMUM STRESS VALUE POINT; TUNGSTEN STACKED VIA;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0033311153     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.778195     Document Type: Article

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