SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 322, Issue 1-2, 1998, Pages 1-5

Interelectrode separation effects on a-SiGe:H films prepared by plasma chemical vapor deposition

(6) Sali, Jaydeep V a Rashad, Abduljabbar a Marathe, B R a Takwale, M G a Gangurde, K D a Shaligram, A D a

a UNIVERSITY OF PUNE (India)

Author keywords

Amorphous materials; Electrical properties and measurements; Glow discharge

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRODES; ENERGY GAP; FILM GROWTH; FILM PREPARATION; GLOW DISCHARGES; PHOTOSENSITIVITY; PLASMA APPLICATIONS; SILICON COMPOUNDS;

PLASMA CHEMICAL VAPOR DEPOSITION; POSITRON LIFE TIME SPECTROSCOPY (PLTS);

AMORPHOUS FILMS;

EID: 0032496497 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00945-0 Document Type: Article

Times cited : (3)

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