Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n+ Ga0.47In0.53As layers for InP high electron mobility transistor applications

Applied Physics Letters

Volumn 74, Issue 21, 1999, Pages 3221-3223

  Boudart, B ^a   Gaquiere C ^a   Trassaert, S ^a   Constant, M ^b   Lorriaux, A ^b   Lefebvre, N ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b UNIVERSITÉ DES SCIENCES ET TECHNOLOGIES DE LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; DEPOSITION; PASSIVATION; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

DRAIN CURRENT; SURFACE POTENTIAL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032606531     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124111     Document Type: Article

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