Comparison of oxidation methods for magnetic tunnel junction material

Journal of Applied Physics

Volumn 87, Issue 9, 2000, Pages 6061-6063

  Chen, E Y ^a   Whig, R ^a   Slaughter, J M ^a   Cronk, D ^a   Goggin, J ^a   Steiner, G ^a   Tehrani, S ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000391713     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372612     Document Type: Review

References (9)

1. Y. Suezawa, F. Takahashi, and Y. Gondo, Jpn. J. Appl. Phys., Part 2 31, L1415 (1992).
2. T. Miyazaki and N. Tezuka, J. Magn. Magn. Mater. 139, L231 (1995).
3. J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservey, Phys. Rev. Lett. 74, 3273 (1995).
4. S. S. P. Parkin, R. E. Fontana, and A. C. Marley, J. Appl. Phys. 81, 5521 (1997).
5. W, J. Gallagher, J. Appl. Phys. 81, 3741 (1997).
6. R. C. Sousa, J. J. Sun, V. Soares, P. P. Freitas, A. Kling, M. F. da Silva, and J. C. Soares, Appl. Phys. Lett. 73, 3288 (1998).
7. S. Tehrani, J. M. Slaughter, E. Chen, M. Durlam, J. Shi, and M. DeHerrera, IEEE Trans. Magn. 35, 2814 (1999).
8. J. G. Simmons, J. Appl. Phys. 34, 1793 (1963).
9. J. M. Daughton, J. Appl. Phys. 81, 3758 (1997).