The effect of patterns on thermal stress during rapid thermal processing of silicon wafers

IEEE Transactions on Semiconductor Manufacturing

Volumn 11, Issue 1, 1998, Pages 99-107

  Hebb, Jeffrey P ^a   Jensen, Klavs F ^b  

^a EATON CORPORATION   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Finite element methods; Pattern effects; Process model; Thermal stress; Thin film optics; Thin film stress

Indexed keywords

COMPUTER SIMULATION; FINITE ELEMENT METHOD; HEATING; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; PHOTOLITHOGRAPHY; PLASTIC DEFORMATION; TEMPERATURE DISTRIBUTION; THERMAL STRESS; THIN FILMS;

PATTERN EFFECTS; RAPID THERMAL PROCESSING; TEMPERATURE NONUNIFORMITY; THIN FILM OPTICS;

SILICON WAFERS;

EID: 0032003205     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.661289     Document Type: Article

References (31)

1. B. Feil, M. Drew, and J. Moench, "Patterned-induced pattern misregistration after BPSG RTA reflow," in Proc. 1st Int. Rapid Thermal Processing Conf., Scottsdale, AZ, Sept. 8-10, 1993, pp. 114-116.
2. J. F. Buller, M. Farahani, and S. Garg, "RTA induced overlay errors in a global alignment stepper technology," in Proc. 2nd Int. Rapid Thermal Processing Conf., Monterey, CA, Aug. 31-Sept. 2, 1994, pp. 52-56.
3. R. P. S. Thakur, N. Chhabra, and A. Ditali, "Effects of wafer bow and warpage on the integrity of thin gate oxides," Appl. Phys. Lett., vol. 64, pp. 3428-3430, 1994.
4. D. L. Chapek, R. A. Weimer, K. F. Scheugraf, A. Ahmad, R. P. S. Thakur, and R. Singh, "Correlation between thermal stress and the performance of devices processed by RTP," in Proc. 3rd Int. Rapid Thermal Processing Conf., Amsterdam, The Netherlands, Aug. 30-Sept. 1, 1995, p. 281.
5. J. P. Hebb and K. F. Jensen, "The effect of multilayer patterns on temperature uniformity during rapid thermal processing," J. Electrochem. Soc., vol. 143, pp. 1142-1151, 1996.
6. P. Vandenabeele and K. Maex, "Temperature nonuniformity during rapid thermal processing of patterned wafers," in Proc. SPIE, 1989, vol. 1189, pp. 89-103.
7. J. Keuhne, S. Hattangady, and M. Pas, " Effects of patterned films on the uniformity of rapid thermal oxidation," in Proc. 4th Int. Rapid Thermal Processing Conf., Boise, ID, Sept. 11-14, 1996, pp. 417-420.
8. P. Vandenabeele, K. Maex, and R. De Keersmaecker, "Impact of patterned layers on temperature nonuniformity during rapid thermal processing," Mater. Res. Soc. Proc., vol. 146, pp. 149-160, 1989.
9. M. M. Moslehi, "Process uniformity and slip dislocation patterns in linearly ramped-temperature transient rapid thermal processing of silicon," IEEE Trans. Semiconduct. Manufact., vol. 2, pp. 130-140, 1989.
10. G. Benetini, L. Correra, and C. Donolato, "Defects introduced in silicon wafers during rapid isothermal annealing: Thermoelastic and thermoplastic effects," J. Appl. Phys., vol. 56, pp. 2922-2929, 1984.
11. H. A. Lord, "Thermal stress analysis of semiconductor wafers in a rapid thermal processing oven," IEEE Trans. Semiconduct. Dev., vol. 1, pp. 105-114, 1988.
12. A. F. Erofeev, T. M. Makhviladze, A. V. Panjukhin, O. S. Volchek, and O. Adetutu, "Simulation of thermal warpage and stress in patterned wafers during RTP," in Proc. 4th Int. Rapid Thermal Processing Conf., Boise, Idaho, Sept. 11-13, 1996, pp. 342-346.
13. T. P. Merchant, J. V. Cole, K. L. Knutson, J. P. Hebb, and K. F. Jensen, "A systematic approach to simulating rapid thermal processing systems," J. Electrochem. Soc., vol. 143, pp. 2035-2043, 1996.
14. P. Yeh, Optical Waves in Layered Media. New York: Wiley, 1988.
15. P. Timans, "The effect of coatings on the emissivity of silicon," in Proc. 2nd Int. Rapid Thermal Processing Conf., Monterey, CA, Aug. 31-Sept. 2, 1994, pp. 186-193.
16. J. P. Hebb and K. F. Jensen, "Pattern induced temperature nonuniformity during rapid thermal processing," in Proc. 4th Int. Rapid Thermal Processing Conf., Boise, ID, Sept. 11-13, 1996, pp. 34-39.
17. E. D. Palik, Handbook of Optical Constants of Solids. New York: Academic, New York, 1985.
18. B. A. Boley and J. H. Weiner, Theory of Thermal Stresses. Malabar, FL: Krieger, 1985.
19. M. Ohring, The Materials Science of Thin Films. San Diego, CA: Academic, 1992.
20. H. R. Huff and R. K. Goodall, "Challenges and opportunities for dislocation free silicon wafer fabrication and thermal processing: An historical review," Proc. 3rd Int. Rapid Thermal Processing Conf., Amsterdam, The Netherlands, Aug. 30-Sept. 1, 1995, pp. 9-40.
21. S. M. Hu, "Stress related problems in silicon technology," J. Appl. Phys., vol. 70, pp. R53-R80, 1991.
22. L. D. Dyer, H. R. Huff, and W. W. Boyd, "Plastic deformation in central regions of epitaxial silicon slices," J. Appl. Phys., vol. 42, pp. 5680-5688, 1971.
23. W. H. Bowes, L. T. Russell, and G. T. Suter, Mechanics of Engineering Materials. New York: Wiley, 1984.
24. A. E. Widmer and W. Rehwald, "Thermoplastic deformation of silicon wafers," J. Electrochem. Soc., vol. 133, pp. 2403-2409, 1986.
25. J. R. Patel and A. R. Chaudhuri, "Macroscopic plastic properties of dislocation-free germanium and other semiconductor crystals. I. Yield behavior," J. Appl. Phys, vol. 34, pp. 2788-2799, 1963.
26. W. Schroter, H. G. Brion, and H. Siethoff, "Yield point and dislocation mobility in silicon and germanium," J. Appl. Phys, vol. 54, pp. 1816-1820, 1983.
27. S. P. Baker and P. H. Townsend, "Mechanical properties of thin films," Mat. Res. Soc. Fall Meeting Tutorial, 1995.
28. P. N. Kember, S. C. Liddel, and P. Blackborrow, "Characterization of plasma deposited silicon nitride as applied to novel MOS structures," Semicond. Int., vol. 8, p. 8, 1985.
29. E. W. Hearn, D. J. Werner, and D. A. Dooney, "Film induced stress model," J. Electrochem. Soc., vol. 8, p. 1749, 1986.
30. J. P. Hebb, "Pattern effects in rapid thermal processing," Ph.D. dissertation, Mass. Inst. Technol., Cambridge, MA, 1997.
31. The National Technology Roadmap for Semiconductors, Semiconductor Industry Assoc., San Jose, CA, 1994.