Calculation of the surface excitation parameter for Si and Ge from measured electron backscattered spectra by means of a Monte-Carlo simulation

Microscopy and Microanalysis

Volumn 9, Issue 4, 2003, Pages 343-348

  Orosz, Gábor Tamás ^a   Sulyok, Attila ^a   Gergely, György ^a   Gurbán, Sándor ^a   Menyhard, Miklós ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Electron spectroscopy; Monte Carlo method; Surface excitation parameter

Indexed keywords

EID: 0041738307     PISSN: 14319276     EISSN: None     Source Type: Journal    
DOI: 10.1017/S1431927603030241     Document Type: Conference Paper

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