Enhancing the thermal stability of low dielectric constant hydrogen silsesquioxane by ion implantation

Thin Solid Films

Volumn 332, Issue 1-2, 1998, Pages 351-355

  Chang, T C ^a   Chou, M F ^b   Mei, Y J ^b   Tsang, J S ^a   Pan, F M ^a   Wu, W F ^a   Tsai, M S ^a   Chang, C Y ^b   Shih, F Y ^c   Huang, H D ^c  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c Dow Corning Taiwan Inc   (Taiwan)

Author keywords

Hydrogen silsesquioxane; Ion implantation; Low dielectric constant

Indexed keywords

FLUORINE; HIGH TEMPERATURE EFFECTS; HYDROGEN INORGANIC COMPOUNDS; ION IMPLANTATION; LEAKAGE CURRENTS; PERMITTIVITY; THERMODYNAMIC STABILITY;

HYDROGEN SILSESQUIOXANE;

DIELECTRIC FILMS;

EID: 0032476363     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01036-0     Document Type: Article

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