Investigation of the mechanical strength of hydrogen-annealed czochralski silicon wafers

Journal of the Electrochemical Society

Volumn 146, Issue 1, 1999, Pages 364-366

  Sueoka, Koji ^a   Akatsuka, Masanori ^a  

^a Sumitomo Metal Industries Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); HIGH TEMPERATURE OPERATIONS; LOW TEMPERATURE OPERATIONS; PRECIPITATION (CHEMICAL); STRENGTH OF MATERIALS; THERMAL STRESS;

SLIP DISLOCATIONS;

SILICON WAFERS;

EID: 0032759414     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391614     Document Type: Article

References (5)

1. H. Tsuya, Oxygen in Silicon, F. Shimura, Editor, p. 661, Academic, Boston, MA (1994).
2. K. Izunome, H. Shirai, K. Kashima, J. Yoshikawa, and A. Hojo, Appl. Phys. Lett., 68, 49 (1996).
3. J. R. Patel, Discuss. Faraday Soc., 38, 201 (1964).
4. T. Suzuki and H. Kojima, Acta Met., 14, 913 (1966).
5. J. E. A. Miltat and D. K. Bowen, Phys. Status Solidi A, 3, 431 (1970).