Effect of oxygen partial pressure on silicon single crystal growth by floating zone technique: Surface oxidation and marangoni flow

Crystal Research and Technology

Volumn 38, Issue 7-8, 2003, Pages 619-626

  Hibiya, Taketoshi ^a   Asai, Yoshihiko ^a   Sumiji, Masanobu ^b   Kojima, Toshiya ^a  

^a TOKYO METROPOLITAN UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Floating zone; Marangoni flow; Oxygen partial pressure; Silicon

Indexed keywords

OXIDATION; OXYGEN; PARTIAL PRESSURE; SILICON; SINGLE CRYSTALS; SURFACE TENSION;

SURFACE OXIDATION;

CRYSTAL GROWTH;

EID: 0041508883     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200310076     Document Type: Article

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