Floating-zone growth of silicon in magnetic fields II. Strong static axial fields

Journal of Crystal Growth

Volumn 183, Issue 4, 1998, Pages 554-563

  Croll A ^a   Szofran, F R ^b   Dold, P ^a   Benz, K W ^a   Lehoczky, S L ^b  

^a UNIVERSITY OF FREIBURG   (Germany)

^b NASA MARSHALL SPACE FLIGHT CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

FLOATING ZONE GROWTH METHOD; STRIATION PATTERNS; THERMOCAPILLARY CONVECTION;

SEMICONDUCTING SILICON;

EID: 0032002764     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00486-7     Document Type: Article

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