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Volumn 203, Issue 4, 1999, Pages 500-510
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Measurement of temperature fluctuations and microscopic growth rates in a silicon floating zone under microgravity
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Author keywords
[No Author keywords available]
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Indexed keywords
ANTIMONY;
DOPING (ADDITIVES);
INTERFACES (MATERIALS);
MICROGRAVITY PROCESSING;
MICROSCOPIC EXAMINATION;
SENSORS;
SILICON;
TEMPERATURE MEASUREMENT;
CONVECTIVE TEMPERATURE FLUCTUATIONS;
DIFFERENTIAL INTERFERENCE CONTRAST MICROSCOPY;
FLOATING ZONE TECHNIQUE;
GROWTH RATE FLUCTUATIONS;
MARANGONI CONVECTION;
SPREADING RESISTANCE MEASUREMENT;
CRYSTAL GROWTH FROM MELT;
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EID: 0033149096
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(99)00155-4 Document Type: Article |
Times cited : (55)
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References (28)
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