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Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1671-1677

Measurement of microscopic growth rates in float zone silicon crystals

(4) Dold, Pit a Schweizer, M a,b Croll A c Benz, K W a

a UNIVERSITY OF FREIBURG (Germany)

b NASA MARSHALL SPACE FLIGHT CENTER (United States)

c TU BERGAKADEMIE FREIBERG (Germany)

Author keywords

A1. Convection; A1. Growth velocity; A1. Interfaces; A1. Magnetic fields; A1. Segregation; A2. Floating zone technique; B2. Semiconducting silicon

Indexed keywords

BOUNDARY LAYERS; HEAT CONVECTION; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; MELTING; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

FLOATING ZONE TECHNIQUES; HEAT PULSES;

CRYSTAL GROWTH;

EID: 0036530938 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02318-1 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.