Interpreting the oxygen partial pressure around a molten silicon drop in terms of its surface tension

Journal of Crystal Growth

Volumn 233, Issue 3, 2001, Pages 417-424

  Azami, Takeshi ^a   Hibiya, Taketoshi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

A1. surfaces; B2 semiconducting silicon

Indexed keywords

MATHEMATICAL MODELS; MELTING FURNACES; OXYGEN; PARTIAL PRESSURE; SURFACE TENSION;

SILICON DROPS;

SEMICONDUCTING SILICON;

EID: 0035546585     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01557-3     Document Type: Article

References (12)