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Volumn 183, Issue 4, 1998, Pages 564-572
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Floating-zone growth of silicon in magnetic fields III. Numerical simulation
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Author keywords
[No Author keywords available]
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Indexed keywords
BOUNDARY LAYER FLOW;
COMPUTER SIMULATION;
CRYSTAL GROWTH;
MAGNETIC FIELD EFFECTS;
PHOSPHORUS;
SEMICONDUCTING ANTIMONY;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
TEMPERATURE DISTRIBUTION;
FLOATING ZONE GROWTH METHOD;
MARANGONI NUMBERS;
SEMICONDUCTING SILICON;
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EID: 0031996713
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(97)00487-9 Document Type: Article |
Times cited : (64)
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References (19)
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