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Volumn 183, Issue 4, 1998, Pages 564-572

Floating-zone growth of silicon in magnetic fields III. Numerical simulation

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY LAYER FLOW; COMPUTER SIMULATION; CRYSTAL GROWTH; MAGNETIC FIELD EFFECTS; PHOSPHORUS; SEMICONDUCTING ANTIMONY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TEMPERATURE DISTRIBUTION;

EID: 0031996713     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00487-9     Document Type: Article
Times cited : (64)

References (19)
  • 7
    • 0041713294 scopus 로고
    • Convection and inhomogeneities in crystal growth from the melt
    • H.C. Freyhard (Ed.), Springer, Berlin
    • G. Müller, Convection and inhomogeneities in crystal growth from the melt, in: H.C. Freyhard (Ed.), Crystals: Growth, Properties and Applications, vol. 12, Springer, Berlin, 1988.
    • (1988) Crystals: Growth, Properties and Applications , vol.12
    • Müller, G.1
  • 11
    • 0003708717 scopus 로고    scopus 로고
    • Fluid Dynamics Inc., Evanston
    • M.S. Engelman, FIDAP 7.6, Fluid Dynamics Inc., Evanston, 1996.
    • (1996) FIDAP 7.6
    • Engelman, M.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.